High-Density 3D Multi-Layer Via Capacitors Based on Silicon Oxide Dielectric with Ultra-Low Parasitic Parameters for Advanced ICs

发表于昨天 15:26

期刊：2026 27th International Conference on Electronic Packaging Technology (ICEPT)

文献作者：Wenting Liang; Jianming Zhong; Chongyi Chen; Zhihao Chen; Haoyang Peng; Jie Wu; Dong Xie; Xing Hu; Shujuan Liu

出版日期：2026-8-

DOI号：10.1109/icept71373.2026.11690326

下载链接：https://ieeexplore.ieee.org/stampPDF/getPDF.jsp?arnumber=11690326

文献链接：https://doi.org/10.1109/icept71373.2026.11690326

当前文献来源于 IEEE。

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[IEEE] High-Density 3D Multi-Layer Via Capacitors Based on Silicon Oxide Dielectric with Ultra-Low Parasitic Parameters for Advanced ICs

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[IEEE] High-Density 3D Multi-Layer Via Capacitors Based on Silicon Oxide Dielectric with Ultra-Low Parasitic Parameters for Advanced ICs