文献作者：Laura García-Velázquez; Pablo Sánchez-Cueto; Salvador Lladó; Beatriz Gozalo; Victoria Ochoa; Giulia Bongiorno; Anna Clocchiatti; María Paula Barral; Nikolaos Stathopoulos; Melpomeni Zoka; Mathilde Jeanbille; Martin Hartmann; Ron de Goede; Laurent Philippot; Ina Alsina; Joseph Blaise Dongmo Lekagne; Laila Dubova; Fuensanta García-Orenes; Helle Hestbjerg; Daniel Johnson; Luis Daniel Olivares Martínez; Katja Schmidt; Ximena Sirimarco; Rochana Tangkoonboribun; Tomas Van De Sande; Toth Zoltan; Cristina Yacoub; Kerry Ryan; Taina Pennanen; Charalampos Kontoes; Santiago Soliveres
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A 7-eV bandgap semiconductor based on silicon-doped α-(AlxGa1–x)2O3
