文献作者：Jacob Steele; Debaditya Bhattacharya; Kazuki Nomoto; Naomi A. Pieczulewski; Preston Sorensen; Viet-Anh Ha; Nick Pant; Ihit Shukla; Shaon Das; Ufuk Kilic; Madhav Ramesh; Feliciano Giustino; Baishakhi Mazumder; M. K. Indika Senevirathna; Michael D. Williams; Mathias Schubert; David A. Muller; Huili G. Xing; Debdeep Jena; Darrell. G. Schlom
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A 7-eV bandgap semiconductor based on silicon-doped α-(AlxGa1–x)2O3
