Quantum dots light-emitting diodes (QLEDs) are a type of display technology that uses quantum dots (QDs) to emit light. QLEDs based on Cadmium Selenide (CdSe) have been intensively studied because of their narrow emission bandwidth, tunable emission color, and excellent color purity. However, one of the significant challenges with CdSe-based QLED is the fatigue effect during operation, particularly around the turn-on voltage.
The fatigue effect in red emissive CdSe QLEDs can be attributed to various reasons:
1. Charge Trapping: During operation, QDs may capture some carriers (electrons/holes) and become charged, resulting in non-radiative recombination and efficiency loss.
2. Self-heating: The operation of QLEDs generates heat, which can accelerate the degradation of QDs and organic materials in the device, causing efficiency roll-off and shortening the lifespan of the device.
3. Over-Injection of Carriers: At high current densities, the over-injection of carriers can cause a buildup of charged QDs, which leads to non-radiative Auger recombination, reducing the efficiency of QLEDs.
One possible way to mitigate the fatigue effect is to optimize the balance of electron and hole injection into the LED. This could potentially reduce charge trapping and self-heating, thus improving the device performance and stability. Additionally, using advanced materials resistant to high temperatures and minimizing the driving current could also be beneficial for enhancing the lifespan and efficiency of red emissive CdSe-based QLEDs. |
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