The study on surface thermal oxidation of silicon carbide irradiated by pulsed laser using reactive molecular dynamics is a field in materials science and engineering. Silicon carbide (SiC) is a semiconductor material with excellent properties like high thermal conductivity, high electric field breakdown strength, and high maximum current density.
In this study, the surface of SiC is exposed to a pulsed laser, causing rapid heating and cooling on the surface which results in structural changes. Oxidation is also induced on the SiC surface due to the thermal effects brought by the pulsed laser.
Reactive molecular dynamics (ReaxFF) simulation is extensively used in this type of studies where non-equilibrium conditions are prevalent. It provides detailed information about atomic-level phenomena - for instance, it helps understand how the oxidizing species (oxygen) interacts with the silicon carbide surface during and after the laser irradiation. Also, it provides insights on the kinetics and mechanisms of oxidation under these extreme conditions.
The findings from such a study could be useful in many applications, particularly in microelectronics, where SiC is used, and in the development of protective coatings resistant to harsh environmental conditions. This study can also contribute to the broader understanding of high-temperature oxidation processes in various materials. |
求助已关闭
30