Systematic Study of Nickel Silicide Based on Wafer-Scale Electrical Testing in 12-in 55 nm CMOS Technology

发表于 2026-7-8 17:49:48

期刊：IEEE Transactions on Electron Devices

文献作者：Weitong Zhang; Jianghong Wang; Yang Xu; Wenzhang Fang; Ran Tao; Xiaohui Yu; Yishu Zhang; Zhiyuan Cheng; Yunyan Zhang

出版日期：2025-5-

DOI号：10.1109/ted.2025.3556407

下载链接：https://ieeexplore.ieee.org/stampPDF/getPDF.jsp?arnumber=10967364

文献链接：https://doi.org/10.1109/ted.2025.3556407

当前文献来源于 Institute of Electrical and Electronics Engineers (IEEE)。

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[IEEE] Systematic Study of Nickel Silicide Based on Wafer-Scale Electrical Testing in 12-in 55 nm CMOS Technology

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