Self-Aligned Single Diffusion Break Technology Optimization Through Material Engineering for Advanced CMOS Nodes

发表于 2026-8-4 22:39:04

期刊：2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

文献作者：Ashish Pal; El Mehdi Bazizi; Liu Jiang; Mehdi Saremi; Blessy Alexander; Buvna Ayyagari-Sangamalli

出版日期：2020-9-23

DOI号：10.23919/sispad49475.2020.9241625

下载链接：https://ieeexplore.ieee.org/stampPDF/getPDF.jsp?arnumber=9241625

文献链接：https://doi.org/10.23919/sispad49475.2020.9241625

当前文献来源于 IEEE。

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[IEEE] Self-Aligned Single Diffusion Break Technology Optimization Through Material Engineering for Advanced CMOS Nodes

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