Novel Postgate Single Diffusion Break Integration in Gate-All-Around Nanosheet Transistors to Achieve Remarkable Channel Stress for N/P Current Matching

发表于 2026-8-9 20:51:28

期刊：IEEE Transactions on Electron Devices

文献作者：Tao Liu; Dawei Wang; Zhecheng Pan; Kun Chen; Jingwen Yang; Chunlei Wu; Saisheng Xu; Chen Wang; Min Xu; David Wei Zhang

出版日期：2022-3-

DOI号：10.1109/ted.2021.3139579

下载链接：https://ieeexplore.ieee.org/stampPDF/getPDF.jsp?arnumber=9680774

文献链接：https://doi.org/10.1109/ted.2021.3139579

当前文献来源于 Institute of Electrical and Electronics Engineers (IEEE)。

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[IEEE] Novel Postgate Single Diffusion Break Integration in Gate-All-Around Nanosheet Transistors to Achieve Remarkable Channel Stress for N/P Current Matching

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