Mechanism Analysis of Gate Oscillation between Paralleled SiC MOSFETs Induced by Mismatched Parameters of the Freewheeling Branches

发表于 5 天前

期刊：IEEE Transactions on Power Electronics

文献作者：Kezhou Bai; Cai Chen; Jianwei Lv; Zexiang Zheng; Jiaxin Liu; Jiajia Guan; Yipeng Liu; Weishan Lv; Yong Kang

出版日期：2026--

DOI号：10.1109/tpel.2026.3701754

下载链接：https://ieeexplore.ieee.org/stampPDF/getPDF.jsp?arnumber=11554928

文献链接：https://doi.org/10.1109/tpel.2026.3701754

当前文献来源于 Institute of Electrical and Electronics Engineers (IEEE)。

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[IEEE] Mechanism Analysis of Gate Oscillation between Paralleled SiC MOSFETs Induced by Mismatched Parameters of the Freewheeling Branches

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