Repairing etched sidewall surface of InGaN/GaN micro-light emitting diode through neutral N/H radicals in high vacuums

发表于昨天 09:40

期刊：Applied Physics Letters

文献作者：Kai Li; Zhi-Qiao Li; Mengjing Jiang; Guobin Wang; Yang Wang; Nan Hu; Shunan Zheng; Feifei Tian; Wentao Song; Ke Xu

出版日期：2026-7-20

DOI号：10.1063/5.0333059

下载链接：https://pubs.aip.org/aip/apl/art ... 103_1_5.0333059.pdf

文献链接：https://doi.org/10.1063/5.0333059

当前文献来源于 AIP Publishing。

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[AIP] Repairing etched sidewall surface of InGaN/GaN micro-light emitting diode through neutral N/H radicals in high vacuums

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