Effect of ITO Serving as a Barrier Layer for Cu Electrodes on Performance of a-IGZO TFT

发表于 1 小时前

期刊：IEEE Electron Device Letters

文献作者：Shiben Hu; Kuankuan Lu; Honglong Ning; Zhiqiang Fang; Xianzhe Liu; Weiguang Xie; Rihui Yao; Jianhua Zou; Miao Xu; Junbiao Peng

出版日期：2018-4-

DOI号：10.1109/led.2018.2800725

下载链接：https://ieeexplore.ieee.org/stampPDF/getPDF.jsp?arnumber=8278186

文献链接：https://doi.org/10.1109/led.2018.2800725

当前文献来源于 Institute of Electrical and Electronics Engineers (IEEE)。

备注信息：

发表于 1 小时前

: 当前求助处于待确认状态,请尽快下载
如果48小时后该求助仍未采纳，系统将自动采纳。

[IEEE] Effect of ITO Serving as a Barrier Layer for Cu Electrodes on Performance of a-IGZO TFT

同分类求助

最新回复

站点公告

今日热心研友

（热心研友QQ群）

[IEEE] Effect of ITO Serving as a Barrier Layer for Cu Electrodes on Performance of a-IGZO TFT 一键复制

同分类求助

最新回复

站点公告

今日热心研友

（热心研友QQ群）

[IEEE] Effect of ITO Serving as a Barrier Layer for Cu Electrodes on Performance of a-IGZO TFT