Demonstration of 2T1C 3D-DRAM With IGZO Vertical Channel Access Transistors for BEOL Monolithic Multi-Deck Stacking

发表于 2026-8-20 10:56:38

期刊：IEEE Electron Device Letters

文献作者：Ziyi Liu; Liyang Pan; Yiwei Du; Qi Hu; Renrong Liang; Ting Liu; Guilei Wang; Zhigang Zhang; Zhaoyan Gao; Jianshi Tang; Bin Gao; Jun Xu; He Qian; Chao Zhao; Huaqiang Wu; Yuegang Zhang

出版日期：2026-4-

DOI号：10.1109/led.2026.3665028

下载链接：https://ieeexplore.ieee.org/stampPDF/getPDF.jsp?arnumber=11400543

文献链接：https://doi.org/10.1109/led.2026.3665028

当前文献来源于 Institute of Electrical and Electronics Engineers (IEEE)。

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[IEEE] Demonstration of 2T1C 3D-DRAM With IGZO Vertical Channel Access Transistors for BEOL Monolithic Multi-Deck Stacking

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