A Review on Gate Oxide Failure Mechanisms of Silicon Carbide Semiconductor Devices

发表于 2026-8-24 21:34:01

期刊：IEEE Transactions on Electron Devices

文献作者：Jinglin Li; Aditya Shekhar; Willem D. van Driel; Guoqi Zhang

出版日期：2024-12-

DOI号：10.1109/ted.2024.3482252

下载链接：https://ieeexplore.ieee.org/stampPDF/getPDF.jsp?arnumber=10735777

文献链接：https://doi.org/10.1109/ted.2024.3482252

当前文献来源于 Institute of Electrical and Electronics Engineers (IEEE)。

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发表于 2026-8-26 09:59:01

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[IEEE] A Review on Gate Oxide Failure Mechanisms of Silicon Carbide Semiconductor Devices

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