Design and Fabrication of a Novel 1200 V 4H-SiC Trench MOSFET With Periodically Grounded Trench Bottom Shielding

发表于 2026-8-31 10:46:08

期刊：IEEE Transactions on Electron Devices

文献作者：Jun Yuan; Wei Chen; Fei Guo; Kuan Wang; Zhijie Cheng; Yangyang Wu; Shaodong Xu; Rong Zhang; Guoqing Xin; Zhiqiang Wang

出版日期：2025-6-

DOI号：10.1109/ted.2025.3559888

下载链接：https://ieeexplore.ieee.org/stampPDF/getPDF.jsp?arnumber=10979292

文献链接：https://doi.org/10.1109/ted.2025.3559888

当前文献来源于 Institute of Electrical and Electronics Engineers (IEEE)。

备注信息：

发表于 2026-8-31 10:46:09

: 当前求助已完成，请重新发起求助。
已完结状态的附件将会在24小时内删除。

[IEEE] Design and Fabrication of a Novel 1200 V 4H-SiC Trench MOSFET With Periodically Grounded Trench Bottom Shielding

已采纳

同分类求助

最新回复

站点公告

今日热心研友

（热心研友QQ群）

[IEEE] Design and Fabrication of a Novel 1200 V 4H-SiC Trench MOSFET With Periodically Grounded Trench Bottom Shielding 一键复制