Investigation Into the Third Quadrant Characteristics of Silicon Carbide MOSFET

发表于昨天 10:07

期刊：IEEE Transactions on Power Electronics

文献作者：Lei Tang; Huaping Jiang; Xiaohan Zhong; Guanqun Qiu; Hua Mao; Xiaofeng Jiang; Xiaowei Qi; Changhong Du; Qianlei Peng; Li Liu; Li Ran

出版日期：2023-1-

DOI号：10.1109/tpel.2022.3202705

下载链接：https://ieeexplore.ieee.org/stampPDF/getPDF.jsp?arnumber=9869689

文献链接：https://doi.org/10.1109/tpel.2022.3202705

当前文献来源于 Institute of Electrical and Electronics Engineers (IEEE)。

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[IEEE] Investigation Into the Third Quadrant Characteristics of Silicon Carbide MOSFET