Investigation on Degradation of 1200-V Planar and Trench SiC MOSFET Under Surge Current Stress of Body Diode

发表于昨天 10:37

期刊：IEEE Transactions on Electron Devices

文献作者：Xinbin Zhan; Yanjing He; Jiankun Lai; Hao Yuan; Qingwen Song; Xiaoyan Tang; Xiaowu Gong; Yuming Zhang

出版日期：2024-1-

DOI号：10.1109/ted.2023.3335892

下载链接：https://ieeexplore.ieee.org/stampPDF/getPDF.jsp?arnumber=10363113

文献链接：https://doi.org/10.1109/ted.2023.3335892

当前文献来源于 Institute of Electrical and Electronics Engineers (IEEE)。

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[IEEE] Investigation on Degradation of 1200-V Planar and Trench SiC MOSFET Under Surge Current Stress of Body Diode