Hot-carrier degradation mechanism and optimization design of low-voltage N-channel lateral double-diffused metal-oxide-semiconductor field-effect transistors

发表于 2026-9-11 10:37:25

期刊：Acta Physica Sinica

文献作者：Mingyang ZOU; Ming QIAO; Bo ZHANG

出版日期：2026--

DOI号：10.7498/aps.75.20260115

文献链接：https://doi.org/10.7498/aps.75.20260115

当前文献来源于 Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences。

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