[IEEE] Novel 4F2 Multi-Bit Dual-Gate 2T0C for High-Density DRAM with Improved Vertical-Channel IGZO TFTs by Self-Aligned Single-Step Process

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kaixinyu 发表于 2026-9-24 16:22:21 | 显示全部楼层 |阅读模式
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期刊:2024 IEEE International Electron Devices Meeting (IEDM)

文献作者:Fuxi Liao; Zhengyong Zhu; Kaifei Chen; Guanhua Yang; Menggan Liu; Wendong Lu; Zijing Wu; Jiebin Niu; Congyan Lu; Bok-Moon Kang; Jinghong Shi; Xie-Shuai Wu; Runsen Yu; Weidong Zhang; Jing Zhang; Gui-Lei Wang; Jinshan Yue; Jiawei Wang; Lingfei Wang; Di Geng; Nianduan Lu; Chao Zhao; Arokia Nathan; Ling Li; Ming Liu

出版日期:2024-12-7

DOI号:10.1109/iedm50854.2024.10873464

下载链接:https://ieeexplore.ieee.org/stampPDF/getPDF.jsp?arnumber=10873464

文献链接:https://doi.org/10.1109/iedm50854.2024.10873464

当前文献来源于 IEEE。


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