Degradation Evaluation for Ion Implantation Doping in 1.2-kV SiC MOSFET Body Diode Under Third-Quadrant Conduction

发表于 2026-9-29 09:22:11

期刊：IEEE Journal of Emerging and Selected Topics in Power Electronics

文献作者：Xinbin Zhan; Yanjing He; Tongtong Xia; Song Yuan; Hao Yuan; Qingwen Song; Xiaoyan Tang; Xiaowu Gong; Yuming Zhang

出版日期：2026-4-

DOI号：10.1109/jestpe.2025.3615620

下载链接：https://ieeexplore.ieee.org/stampPDF/getPDF.jsp?arnumber=11184527

文献链接：https://doi.org/10.1109/jestpe.2025.3615620

当前文献来源于 Institute of Electrical and Electronics Engineers (IEEE)。

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[IEEE] Degradation Evaluation for Ion Implantation Doping in 1.2-kV SiC MOSFET Body Diode Under Third-Quadrant Conduction

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