Ultra-High-Voltage 4H-SiC IGBTs Enabled by Wafer Back-Grinding: A Manufacturing Pathway for SiC Bipolar Devices

发表于 1 小时前

期刊：2026 IEEE 38th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

文献作者：N. Donato; M. Kah; F. Udrea; G.Gupta; M. Pocaterra; E. Ceccarelli; G. Alfieri; B. Boksteen; N.Klipfel; A.Schoner; M. Dinse; JH Peters; N. Kaminski; LA Figueras La Peruta; G.Pellegrini

出版日期：2026-5-24

DOI号：10.1109/ispsd64561.2026.11553795

下载链接：https://ieeexplore.ieee.org/stampPDF/getPDF.jsp?arnumber=11553795

文献链接：https://doi.org/10.1109/ispsd64561.2026.11553795

当前文献来源于 IEEE。

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[IEEE] Ultra-High-Voltage 4H-SiC IGBTs Enabled by Wafer Back-Grinding: A Manufacturing Pathway for SiC Bipolar Devices