A Workfunction Engineered Middle-Silicon-TiN Gate (MSTG) Cell Transistor in 16Gbit DRAM for High Scalability and Long Data Retention

发表于昨天 13:10

期刊：2023 International Electron Devices Meeting (IEDM)

文献作者：Seong-Wan Ryu; Kyung Kyu Min; Sunghwan Hwang; Hyunmin Seung; Sungsoo Yoon; Yoonjae Nam; Jungmin Moon; Yaeji Kim; Euntae Kim; Jongkook Park; Kyoungchul Jang; Sinwoo Kang; Taekyun Kim; Seonsoon Kim; Ilsup Jin; Seonyong Cha

出版日期：2023-12-9

DOI号：10.1109/iedm45741.2023.10413732

下载链接：https://ieeexplore.ieee.org/stampPDF/getPDF.jsp?arnumber=10413732

文献链接：https://doi.org/10.1109/iedm45741.2023.10413732

当前文献来源于 IEEE。

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[IEEE] A Workfunction Engineered Middle-Silicon-TiN Gate (MSTG) Cell Transistor in 16Gbit DRAM for High Scalability and Long Data Retention

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[IEEE] A Workfunction Engineered Middle-Silicon-TiN Gate (MSTG) Cell Transistor in 16Gbit DRAM for High Scalability and Long Data Retention