Sensitivity and Mechanism Study of Single-Event Burnout in 4H-SiC Devices With FLRs Termination

发表于昨天 14:21

期刊：IEEE Transactions on Electron Devices

文献作者：Keyu Liu; Xiaoyan Tang; Hao Yuan; Qingwen Song; Yancong Liu; Yu Zhou; Fengyu Du; Yuming Zhang

出版日期：2023-6-

DOI号：10.1109/ted.2023.3270132

下载链接：https://ieeexplore.ieee.org/stampPDF/getPDF.jsp?arnumber=10121486

文献链接：https://doi.org/10.1109/ted.2023.3270132

当前文献来源于 Institute of Electrical and Electronics Engineers (IEEE)。

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[IEEE] Sensitivity and Mechanism Study of Single-Event Burnout in 4H-SiC Devices With FLRs Termination