Effect of Si donor doping concentration in AlGaN quantum barriers on band alignment and carrier injection in InGaN blue light-emitting diodes

发表于 2026-11-5 17:11:21

期刊：6th International Conference on Laser, Optics, and Optoelectronic Technology (LOPET 2026)

文献作者：Hongrui Zhao

出版日期：2026-8-15

DOI号：10.1117/12.3122865

文献链接：https://doi.org/10.1117/12.3122865

当前文献来源于 SPIE。

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[SPIE] Effect of Si donor doping concentration in AlGaN quantum barriers on band alignment and carrier injection in InGaN blue light-emitting diodes

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[SPIE] Effect of Si donor doping concentration in AlGaN quantum barriers on band alignment and carrier injection in InGaN blue light-emitting diodes 一键复制