A Novel Low-Cost 3D-Stackable 2T0C DRAM Cell with Vertical-Double-Gate and Lateral-C-shape-Channel InGaZnO Transistors

发表于昨天 17:17

期刊：2026 10th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

文献作者：Ziyi Liu; Yiwei Du; Liyang Pan; Renrong Liang; Ting Liu; Qi Hu; Zhigang Zhang; Zhaoyan Gao; Jianshi Tang; Bin Gao; Jun Xu; He Qian; Huaqiang Wu; Yuegang Zhang

出版日期：2026-3-1

DOI号：10.1109/edtm65772.2026.11496859

下载链接：https://ieeexplore.ieee.org/stampPDF/getPDF.jsp?arnumber=11496859

文献链接：https://doi.org/10.1109/edtm65772.2026.11496859

当前文献来源于 IEEE。

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[IEEE] A Novel Low-Cost 3D-Stackable 2T0C DRAM Cell with Vertical-Double-Gate and Lateral-C-shape-Channel InGaZnO Transistors