Moreover, despite frequent references to “La10Si6O27”,the existence of this compound is dubious, as steric restrictions lead to signifificant M-O (M = La, Si) overbonding. This is in contrast to La10Ge6O27, where lattice expansion (IRGe > IRSi) allows complete fifilling of interstitial positions.
在四面体结构中引入大阳离子导致氧离子通道周围La位点的欠键（This leads to underbonding (reduced bond valence sum) at the La sites surrounding the oxide-ion channel, which is relieved by the tetrahedral Ge4 units tilting in the triclinic cell.），那此处的overbonding产生的原因是什么
IRGe和IRSi是判断什么的依据
求助已关闭
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