Low thermal boundary resistance and reduced junction temperature in GaN HEMTs via AlN-mediated top-side diamond integration

发表于 2026-7-15 16:05:55

期刊：Semiconductor Science and Technology

文献作者：Kexin Deng; Xinhua Wang; Junjun Wei; Guanjun Jing; Han Li; Chao Yuan; Sen Huang; Ke Wei; Yingkui Zheng; Xinguo Gao; Xinyu Liu

出版日期：2026-4-1

DOI号：10.1088/1361-6641/ae5ccc

下载链接：https://iopscience.iop.org/article/10.1088/1361-6641/ae5ccc

文献链接：https://doi.org/10.1088/1361-6641/ae5ccc

当前文献来源于 IOP Publishing。

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[IOP] Low thermal boundary resistance and reduced junction temperature in GaN HEMTs via AlN-mediated top-side diamond integration

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