[IEEE] Investigation of Degradation Mechanisms in SiC MOSFETs Under Synergy Negative Gate Voltage Stress and High-Temperature Reverse Bias |
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Role of trapping/detrapping in HTRB Stress and pulsed DC conditions in AlGaN/GaN HEMTs analyzed via TCAD simulations
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Investigation of Degradation Mechanisms in SiC MOSFETs Under Synergy Negative Gate Voltage Stress and High-Temperature Reverse Bias
10
Novel Silica-Based PV Glass Cover Providing Higher Radiative Cooling and Power Production Compared With State-of-the-Art Glass Covers
