New Insights into the Transient Behavior of IGZO 2T0C DRAM: Capacitive Coupling, Carrier Injection and De-trapping

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期刊：2026 10th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

文献作者：Wenjie Zhao; Yecheng Yang; Qianlan Hu; Yuzhe Zhu; Honggang Liu; Shiwei Yan; Ranhui Liu; Yanqing Wu

出版日期：2026-3-1

DOI号：10.1109/edtm65772.2026.11497953

下载链接：https://ieeexplore.ieee.org/stampPDF/getPDF.jsp?arnumber=11497953

文献链接：https://doi.org/10.1109/edtm65772.2026.11497953

当前文献来源于 IEEE。

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[IEEE] New Insights into the Transient Behavior of IGZO 2T0C DRAM: Capacitive Coupling, Carrier Injection and De-trapping