Demonstration of Stacked Planar Channel-All-Around (P-CAA) IGZO FETs with Horizontal Word-Line for 3D DRAM and In-depth Analysis of Density Compared with Horizontal Bit-Line

发表于 2026-8-17 17:11:49

期刊：2026 10th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

文献作者：Weiwei Li; Jianqi Chen; Shipeng Wang; Weihan Fan; Xuezheng Ai; Chen Gu; Chuanke Chen; Xinlv Duan; Congyan Lu; Xiangsheng Wang; Tun Wang; Kaiping Zhang; Jin Dai; Mingxu Liu; Jiebin Niu; Shunqiang Xu; Jinjuan Xiang; Xueli Ma; Yongqing Shen; Yong Yu; Feng Shao; Zhaoqiang Bai; Jing Liang; Guanhua Yang; Yu Liu; Shenjie Zhao; Nianduan Lu; Bok-Moon Kang; Di Geng; Guilei Wang; Chao Zhao; Ling Li; Ming Liu

出版日期：2026-3-1

DOI号：10.1109/edtm65772.2026.11497177

下载链接：https://ieeexplore.ieee.org/stampPDF/getPDF.jsp?arnumber=11497177

文献链接：https://doi.org/10.1109/edtm65772.2026.11497177

当前文献来源于 IEEE。

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[IEEE] Demonstration of Stacked Planar Channel-All-Around (P-CAA) IGZO FETs with Horizontal Word-Line for 3D DRAM and In-depth Analysis of Density Compared with Horizontal Bit-Line

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