文献作者：Ronny Lauerwald; David Bastviken; Tom Battin; Philippe Ciais; Hanqin Tian; George H. Allen; Gwenael Abril; Núria Catalan; Bridget R. Deemer; Alessandra Marzadri; Yves Prairie; Suzanne E. Tank; Qianlai Zhuang; Lishan Ran; Josep G. Canadell; Pierre Regnier
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A 7-eV bandgap semiconductor based on silicon-doped α-(AlxGa1–x)2O3
