[AIP] Simultaneous modifications of nitrogen defect and carbon introduction in g-C3N4 for enhanced photocatalytic hydrogen production |
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Selective area regrowth of silane-doped GaN achieving record carrier density for ultra-low resistive Ohmic contacts for AlGaN/GaN HEMT
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Simultaneous modifications of nitrogen defect and carbon introduction in g-C3N4 for enhanced photocatalytic hydrogen production
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